transistor(pnp) features built-in bias resistors enable the configuration of an inverter circuit without connect ing ex temal input resistors. the bias resistors conisit of thin-film resistors with complete isolation to allow positive biasing of the input. they also have the advantage of almost completely eliminating parasitic effects. only the on/off conditions need to be set for operation, marking device design easy. pin connenctions and marking (1) base (2) emitter (3) collector (1) base (2) emitter (3) collector addreviated symbol: 94 sot-523 addreviated symbol: 94 sot-23-3l sot-23 sot-323 to-92s dta114te DTA114TUA dta114eca dta114tca dta114tka dta114tsa addreviated symbol: 94 addreviated symbol: 94 dta114te/DTA114TUA/dta114tka /dta114tsa/dta114tca 1 date:2011/05 www.htsemi.com semiconductor jinyu
maximum ratings* t a =25 unless otherwise noted limits(dta114t ) symbol parameter e ua ka ca sa units v cbo collector-base voltage -50 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -5 v i c collector current -continuous -100 ma p c collector dissipation 150 200 300 mw t j , t stg junction and storage temperature -55~+150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=- 50 a,i e =0 -50 v collector-emitter breakdown voltage v (br)ceo ic=- 1 ma,i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e =- 50 a,i c =0 -5 v collector cut-off current i cbo v cb =- 50 v,i e =0 -0.5 ua emitter cut-off current i ebo v eb =- 4 v,i c =0 -0.5 ua dc current gain h fe v ce =- 5 v,i c =- 1 ma 100 250 600 collector-emitter saturation voltage v ce(sat) i c =- 10 ma,i b =- 1 ma -0.3 v transition frequency f t v ce =- 10 v,i c =- 5 ma, f= 100 mhz 250 mhz imput resistor r1 7 10 13 k typical characteristics 2 date:2011/05 www.htsemi.com semiconductor jinyu dta114te/DTA114TUA/dta114tka /dta114tsa/dta114tca
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